CHAMPAIGN, Ill. – Thanks to a new semiconductor manufacturing method pioneered at the University of Illinois, the future of solar energy just got brighter.
Although silicon is the industry standard semiconductor in most electronic devices, including the photovoltaic cells that solar panels use to convert sunlight into energy, it is hardly the most efficient material available. For example, the semiconductor gallium arsenide and related compound semiconductors offer nearly twice the efficiency as silicon in solar devices, yet they are rarely used in utility-scale applications because of their high manufacturing cost.
U. of I. professors John Rogers and Xiuling Li explored lower-cost ways to manufacture thin films of gallium arsenide that also allowed versatility in the types of devices they could be incorporated into. "If you can reduce substantially the cost of gallium arsenide and other compound semiconductors, then you could expand their range of applications," said Rogers, the Lee J. Flory Founder Chair in Engineering Innovation, and a professor of materials science and engineering and of chemistry.
Typically, gallium arsenide is deposited in a single thin layer on a small wafer. Either the desired device is made directly on the wafer, or the semiconductor-coated wafer is cut up into chips of the desired size. The Illinois group decided to deposit multiple layers of the material on a single wafer, creating a layered, "pancake" stack of gallium arsenide thin films.
http://www.ecnmag.com/News/2010/05/Semiconductor-manufacturing-technique-holds-promise-for-solar-energy/ "If you grow 10 layers in one growth, you only have to load the wafer one time," said Li, a professor of electrical and computer engineering. "If you do this in 10 growths, loading and unloading with temperature ramp-up and ramp-down take a lot of time. If you consider what is required for each growth – the machine, the preparation, the time, the people – the overhead saving our approach offers is a significant cost reduction."
